? semiconductor components industries, llc, 2009 october, 2009 ? rev. 1 1 publication order number: nss12200w/d nss12200wt1g 12 v, 3 a, low v ce(sat) pnp transistor on semiconductor?s e 2 poweredge family of low v ce(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (v ce(sat) ) and high current gain capability. these are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. typical application are dc ? dc converters and power management in portable and battery powered products such as cellular and cordless phones, pdas, computers, printers, digital cameras and mp3 players. other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. in the automotive industry they can be used in air bag deployment and in the instrument cluster. the high current gain allows e 2 poweredge devices to be driven directly from pmu?s control outputs, and the linear gain (beta) makes them ideal components in analog amplifiers. features ? high current capability (3 a) ? high power handling (up to 650 mw) ? low v ce(s) (170 mv typical @ 1 a) ? small size ? these devices are pb ? free, halogen free/bfr free and are rohs compliant benefits ? high specific current and power capability reduces required pcb area ? reduced parasitic losses increases battery life maximum ratings (t a = 25 c) rating symbol max unit collector-emitter voltage v ceo ? 12 vdc collector-base voltage v cbo ? 12 vdc emitter-base voltage v ebo ? 5.0 vdc collector current ? continuous collector current ? peak i c i cm ? 2.0 ? 3.0 adc electrostatic discharge esd hbm class 3 mm class c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. http://onsemi.com v2 = specific device code m = date code = pb ? free package 12 volts 3.0 amps pnp low v ce(sat) transistor equivalent r ds(on) 163 m collector 1, 2, 5, 6 3 base 4 emitter sc ? 88/sot ? 363 case 419b style 20 v2 m 1 6 device marking device package shipping ? ordering information nss12200wt1g sot ? 363 (pb ? free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. 1
nss12200wt1g http://onsemi.com 2 thermal characteristics characteristic symbol max unit total device dissipation t a = 25 c derate above 25 c p d (note 1) 450 3.6 mw mw/ c thermal resistance, junction ? to ? ambient r ja (note 1) 275 c/w total device dissipation t a = 25 c derate above 25 c p d (note 2) 650 5.2 mw mw/ c thermal resistance, junction ? to ? ambient r ja (note 2) 192 c/w thermal resistance, junction ? to ? lead 6 r jl 105 c/w total device dissipation (single pulse < 10 sec.) p d single 1.4 w junction and storage temperature range t j , t stg ? 55 to +150 c electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? emitter breakdown voltage, (i c = ? 10 madc, i b = 0) v (br)ceo ? 12 ? 15 ? vdc collector ? base breakdown voltage, (i c = ? 0.1 madc, i e = 0) v (br)cbo ? 12 ? 25 ? vdc emitter ? base breakdown voltage, (i e = ? 0.1 madc, i c = 0) v (br)ebo ? 5.0 ? 7.0 ? vdc collector cutoff current, (v cb = ? 12 vdc, i e = 0) i cbo ? ? 0.02 ? 0.1 adc collector ? emitter cutoff current, (v ces = ? 12 vdc, i e = 0) i ces ? ? 0.03 ? 0.1 adc emitter cutoff current, (v ces = ? 5.0 vdc, i e = 0) i ebo ? ? 0.03 ? 0.1 adc on characteristics dc current gain (note 3) (i c = ? 0.5 a, v ce = ? 1.5 v) (i c = ? 0.8 a, v ce = ? 1.5 v) (i c = ? 1.0 a, v ce = ? 1.5 v) h fe 100 100 100 180 165 160 ? 300 ? collector ? emitter saturation voltage (note 3) (i c = ? 0.5 a, i b = ? 10 ma) (i c = ? 0.8 a, i b = ? 16 ma) (i c = ? 1.0 a, i b = ? 20 ma) v ce(sat) ? ? ? ? 0.10 ? 0.14 ? 0.17 ? 0.160 ? 0.235 ? 0.290 v base ? emitter saturation voltage (note 3) (i c = ? 1.0 a, i b = ? 20 ma) v be(sat) ? ? 0.84 ? 0.95 v base ? emitter turn ? on voltage (note 3) (i c = ? 1.0 a, v ce = ? 1.5 v) v be(on) ? ? 0.81 ? 0.95 v cutoff frequency (i c = ? 100 ma, v ce = ? 5.0 v, f = 100 mhz) f t ? 100 ? mhz output capacitance (v cb = ? 1.5 v, f = 1.0 mhz) c obo ? 50 65 pf 1. fr ? 4, minimum pad, 1 oz coverage. 2. fr ? 4, 1 pad, 1 oz coverage. 3. pulsed condition: pulse width < 300 sec, duty cycle < 2%.
nss12200wt1g http://onsemi.com 3 0.1 0 0.5 1 0.3 100 10 0 i c , collector current (amps) figure 1. collector emitter voltage vs. base current figure 2. collector emitter voltage vs. collector current v ce , collector emitter voltage (v) 0.5 0.001 0.1 1 i b , base current (ma) 0.2 0.01 i c = 100 ma 500 ma i c /i b = 100 0.1 0.4 800 ma 1 a 2 a 0.2 0.3 0.4 v ce , collector emitter voltage (v) i c /i b = 10 i c , collector current (a) 1 0.1 0.01 300 200 100 0 t a = ? 55 c 25 c 125 c 0.001 v ce = 1.5 v 400 0.01 0.1 1 10 figure 3. dc current gain vs. collector current i c , collector current (amps) figure 4. base emitter voltage vs. collector current i c , collector current (amps) v be , base emitter voltage (v) h fe , dc current gain figure 5. base emitter saturation voltage vs. base current v ce , collector emitter voltage (volts) 0.001 0.1 0.01 1 0.5 0.3 1.0 0.1 10 1 figure 6. safe operating area 0.6 1 0.01 0.001 0.7 0.8 0.9 1.0 0.1 i c , collector current (amps) v be(sat) , base emitter saturation voltage (v) 0.4 0.7 0.6 0.9 0.8 t a = ? 55 c 25 c 125 c v ce = 1.5 v i c /i b = 100 i c /i b = 10 single pulse t a = 25 c 1 ms 10 ms 100 ms dc 1 s
nss12200wt1g http://onsemi.com 4 t, time (s) figure 7. normalized thermal response 0.1 1 0.001 single pulse 0.0001 0.001 0.01 0.1 1 10 1000 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.01 100 0.00001 r(t), minimum pad normalized transient thermal resistance 0.01 d = 0.02
nss12200wt1g http://onsemi.com 5 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419b ? 01 obsolete, new standard 419b ? 02. e 0.2 (0.008) mm 123 d e a1 a a3 c l 654 ? e ? b 6 pl sc ? 88/sc70 ? 6/sot ? 363 case 419b ? 02 issue w dim min nom max millimeters a 0.80 0.95 1.10 a1 0.00 0.05 0.10 a3 b 0.10 0.21 0.30 c 0.10 0.14 0.25 d 1.80 2.00 2.20 0.031 0.037 0.043 0.000 0.002 0.004 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 min nom max inches 0.20 ref 0.008 ref h e h e e 1.15 1.25 1.35 e 0.65 bsc l 0.10 0.20 0.30 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.004 0.008 0.012 0.078 0.082 0.086 mm inches scale 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 20: pin 1. collector 2. collector 3. base 4. emitter 5. collector 6. collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 nss12200w/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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